网页2N3055/D 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
2N3055 Transistor Pinout, Features, Equivalent & Datasheet
网页2018年11月5日 · 2N3055 is a general purpose NPN power transistor manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. The device is designed for general purpose switching and amplifier applications. 2N3055 Pin Configuration. Like any other transistor 2N3055 has three pins namely EMITTER, BASE and COLLECTOR.
2N3055 Transistor Pinout, Equivalent & Specs in Detail
网页2024年3月21日 · 2N3055 Transistor Pinout. The pinout diagram of 2N3055 is difficult to understand as there is no visible distinction or alignment between the terminals. But you can easily identify the base terminal by looking at the …
2N3055 Datasheet, Pinout, Application Circuits
网页2020年1月1日 · The 2N3055 is a power bipolar transistor designed to handle high power loads in the range of 100 V, and 15 amps. In this post I will comprehensively discuss the pinout function, electrical specification, and application …
2N3055 - Wikipedia
网页The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. [1] …
网页2N3055 NPN MJ2955 PNP COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3055 and MJ2955 are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose switching and amplifier applications. MARKING: FULL PART NUMBER
2N3055 Datasheet | DigiKey - Digi-Key Electronics
网页The 2N3055 is a silicon NPN transistor in a TO3 type case designed for general purpose switching. and amplifier applications. Features: D DC Current Gain: hFE = 20 − 70 @ IC = 4A. D Collector−Emitter Saturation Voltage: VCE (sat) = 1.1V (Max) @ IC = 4A. D Excellent Safe Operating Area. Absolute Maximum Ratings:
Datasheet | DigiKey - Digi-Key Electronics
网页The 2N3055 is a silicon Epitaxial-Base Planar. NPN transistor mounted in Jedec TO-3 metal. ca se. It is intended for power switching circuits, series. and shunt regulators, output s tages and high. fidelity amplif ie rs. The complem ent ary PNP type is MJ2955. INTE RNAL SCHEMATIC DIAGRAM. August 1999.
网页Features. High Current−Gain − Bandwidth Safe Operating Area. These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
2N3055 npn transistor complementary pnp, replacement, pinout…
网页Pinout of 2N3055. Here is an image showing the pin diagram of this transistor. Complementary PNP transistor. The complementary PNP transistor to the 2N3055 is the MJ2955. Replacement and Equivalent for 2N3055 transistor.
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