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网页Smartphone production still sluggish. AMOLED panels becoming mainstream for smartphones. Element Six to lead DARPA UWB program. NCT awarded NEDO gallium oxide project. Finwave and GF partner on RF GaN-on-Si. Lumileds addresses microLED efficiency through EQE and directionality. DOE initiative wants to increase chip energy efficiency 1,000-fold.
Welcome to - News, features and analysis. - Compound …
网页The magazine and its associated website deliver comprehensive coverage of the compound semiconductor industry, from the business of making LEDs, amplifiers, lasers and power chips to development of a vast array of new devices. Compound Semiconductor magazine is also distributed at various industry events throughout the year.
EPC and VIS collaborate on 8-inch power GaN - News
网页2022年12月6日 · EPC will use VIS’ 8-inch (200 mm) wafer fabrication capabilities, significantly increasing manufacturing capacities for EPC’s high-performance GaN transistors and integrated circuits. Manufacturing will commence in early 2023. The products manufactured at VIS, an Automotive IATF 16949 certified foundry, will meet the growing demand for GaN ...
DenseLight begins new chapter under Chinese ownership
网页2019年11月13日 · Singapore-based photonics integration technology company DenseLight Semiconductors has begun a new chapter as an independent organisation, following its divestment by TSX Venture Exchange-listed POET Technologies to DenseLight Semiconductor Technology (Shanghai) for $26 million. This comes three years after its acquisition by POET, during which ...
Simplifying displays with porous GaN microLEDs - News
网页Tuesday 12th April 2022. GaN-based red microLEDs are now delivering a comparable performance to their blue and green cousins, thanks to the introduction of a simple step that produces porous material BY TONGTONG ZHU FROM POROTECH. OVER OUR LIFETIME displays are continuing to evolve. Many of us have already witnessed a shift from TVs based on ...
Shifting to 200 mm silicon carbide - News - Compound …
网页2021年10月18日 · For the ease of achieving good wafer geometry, there is an increase in wafer thickness as the wafer diameter grows. 150 mm-diameter SiC wafers have a thickness of 350 μm, and the initial 200 mm SiC substrates introduced to the market will be 500 μm-thick. As increased thickness reduces the number of wafers made from each puck, there is …
Supercritical carbon dioxide spawns superior MOSFETs
网页2021年1月11日 · The performance of SiC MOSFETs is held back by the quality of the interface between SiC and SiO 2.But this weakness can be addressed with a supercritical CO 2 treatment that slashes the density of interface states, claims a partnership between researchers at Xi’an Jiaotong University and Xidian University.. Spokesman for the team, Weihua Liu from Xi’an Jiaotong University, told Compound ...
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Superior silicon carbide - News - Compound Semiconductor
网页Superior silicon carbide - News. This article was originally featured in the edition: Solution growth eliminates basal plane dislocations in high-quality single crystals of bulk SiC. BY KAZUHIKO Kusunoki, KAZUAKI Seki and YUTAKA Kishida from Nippon Steel AND Sumitomo Metal Corporation and HiRONORI Daikoku, HIROAKI Saito, ISAO Kobayashi and ...
New home for the Institute for Compound Semiconductors
网页Tuesday 23rd May 2023. Nobel-prize-winning climate scientist Donald Wuebbles opens Cardiff University’s Translational Research Hub, a new home for the Institute for Compound Semiconductors. BY RICHARD STEVENSON, EDITOR, CS MAGAZINE. One the cornerstones of the world’s first compound semiconductor cluster, situated in South Wales, is …