It’s based on two competitive technologies, silicon-based LDMOS or RF gallium nitride (GaN). GaN, a III-V technology, outperforms LDMOS, making it ideal for the high-frequency requirements for 5G. But ...
While LDMOS transistors aren’t exactly new – laterally-diffused MOSFETs have been appearing in RF power applications for decades – the particular parts used for the amp, NXP’s MRF300 power ...
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华太电子启动IPO辅导 实控人张耀辉持有超七成表决权 国投招商、元禾控股投了《科创板日报》9月29日讯（记者 邱思雨） 日前，苏州华太电子技术股份有限公司（下称：华太电子）在江苏证监局进行辅导备案登记，辅导机构为华泰联合证券有限责任公司，行业分类为C39计算机、通信和其他电子设备制造业。
Broadcast Electronics has introduced a compact FM transmitter line called ETX. It said they combine characteristics of the ...
Barbieri, Travis A. and Noori, Basim 2013. Improvements in high power LDMOS amplifier efficiency realized through the application of mixed-signal active loadpull. p. 1.
A team of expert authors brings you up to speed on every topic, including: devices (Si LDMOS and VDMOS, GaAs FETs, GaN HEMTs), circuit and amplifier design (discrete, hybrid and monolithic), CAD, ...
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燕东微(688172.SH)：消费类沟槽型IGBT、车规级IGBT完成开发并实现批量生产格隆汇9月10日丨燕东微(688172.SH)在投资者互动平台表示，在当前激烈的市场竞争环境下，燕东微将继续坚持创新为核心的发展战略，不断加大新品研发投入，积极开发新产品及新工艺平台，由传统的消费类市场向新能源、工业、汽车等新领域转移，不断提升公司综 ...
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