Abstract: AN INVESTIGATION has been conducted to determine the applicability of junction transistors to carrier frequency summing amplifiers of the type commonly used, for example, in the a-c analogue ...
In order to develop the necessary technology, the project Magellan—High Efficiency mm-Wave GaN Transistor High Power Amplifier for GEO and LEO Active Antenna Application—was launched in 2024. In ...
In order to develop the necessary technology, the project Magellan — High Efficiency mm-Wave GaN Transistor High Power Amplifier for GEO and LEO Active Antenna Application — was launched in 2024.
In the ESA Magellan project, researchers at Fraunhofer IAF, together with UMS and TESAT, are therefore developing novel efficient GaN transistors and high-power amplifiers for LEO and GEO ...
While it is hard to imagine today, securing a license to produce transistors was difficult in the early days. What’s worse is, even with the license, it was not feasible to use the crude devices ...
Just ahead of its 100th anniversary, Luxman has announced the final member of its Z Series of integrated amplifiers. The L-505Z replaces the L-505uXII to feature an improved MM/MC phono stage, a ...
Abstract: A monolithic operational amplifier with junction FET inputs in combination with n-p-n bipolar transistors is described. Both dc and small signal analysis of the amplifier are carried out.