Whether you are an amplifier designer, applications engineer, technical manager or are just generally interested, RF power transistors often appear to contain quite a lot of magic and can require even ...

Abstract: A novel gate-all-around (GAA) nanosheet field-effect transistor (NSFET) with bottom p-i-n isolation is proposed for the ... Performance benchmarking in terms of both static power consumption ...

In order to develop the necessary technology, the project Magellan—High Efficiency mm-Wave GaN Transistor High Power ...

This design makes the transistors incredibly fast and incredibly thin, two properties that can make a huge difference in making electronics more compact and more efficient. Think about being able to ...

Even this relatively simple circuit arrangement has subtleties that affect performance. In the crisp, clean, theoretical ...