The first transistor was about half an inch high. That's mammoth by today's standards, when 7 million transistors can fit on a single computer chip. It was nevertheless an amazing piece of technology.

So What Was the Transistor Good For? Transistors may have been useful to the phone company and to a handful of scientists building computers, but that wasn't enough to build an industry.

The electronic transistor and the logic gates based on it have qualitative features that are crucial for systems of any complexity, but very few optical transistors or logic devices possess them 3.

For example, you can insert a resistor, a capacitor, an inductor, a diode, or a transistor and get a readout of which pin is which. It seems like magic, but [Andreas Spiess] did the research on ...

A transistor – a word blend of "transfer" and "resistor" – is a fundamental component of today's advanced electronics. Essentially, a transistor, as one of the foundational elements of modern ...

When we were in school, every description of how transistors work was pretty dry and had a lot of math involved. We suppose you might have had a great instructor who was able to explain things ...

Transistors are small, versatile semiconductor devices designed to switch or amplify electronic signals and power. Almost all electronic devices today contain one or more transistors. Some transistors ...

Darlington transistors are circuits that combine two bipolar transistors in a single device. They provide high current gain and require less space than configurations that use two discrete transistors ...

CMOS technology combines two types of transistors that work together, leading to efficient power use and high noise immunity. CMOS technology uses two different types of transistors, n-type (nMOS) and ...

After an exhaustive review of suspect transistors in NASA's Europa Clipper spacecraft, NASA managers have cleared the probe for launch next month as planned on a $5.2 billion mission to find out ...

Conzatti, F. Pala, M.G. Esseni, D. Bano, E. and Selmi, L. 2011. A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs. p. 5.2.1.