Abstract: Sah, Noyce and Shockley have attributed the decrease in the current gain of silicon transistors to recombination in the space-charge region of the emitter-base junction. It is suggested that ...

While it is hard to imagine today, securing a license to produce transistors was difficult in the early days. What’s worse is, even with the license, it was not feasible to use the crude devices ...

It may surprise you to read this, but a substance found in our everyday toothpaste could be the key to edible electronics.

The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can ...

Two tuners were developed for this receiver. The more sensitive one uses tetrode transistors in the RF amplifier, mixer and oscillator. Its disadvantages lie in a much higher cost and a 12 to 14 db ...

Despite their potential advantages over bulk semiconductors, optimally interfacing these materials with gate dielectrics has so far proved challenging, often resulting in interfacial traps that ...

A hot-emitter transistor based on stimulated emission of heated carriers. Credit: IMR During operation, germanium injects high-energy carriers into the graphene base, which then diffuse to the emitter ...

A team of international researchers has developed tunable transistors using silk and graphene. Tunable transistors ...